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ZXMN2F34FH
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source Breakdown
V (BR)DSS
20
V
I D = 250 μ A, V GS =0V
Voltage
Zero Gate Voltage Drain
I DSS
1
μ A
V DS = 20V, V GS =0V
Current
Gate-Body Leakage
I GSS
100
nA
V GS =±12V, V DS =0V
Gate-Source Threshold
V GS(th)
0.5
0.8
1.5
V
I D = 250 μ A, V DS =V GS
Voltage
Static Drain-Source
On-State Resistance (*)
Forward
R DS(on)
g fs
7.5
0.060
0.120
Ω
Ω
S
V GS = 4.5V, I D = 2.5A
V GS = 2.5V, I D = 1.0A
V DS = 10V, I D = 2.5A
Transconductance (*)(?)
Dynamic (?)
Input Capacitance
C iss
277
pF
Output Capacitance
Reverse Transfer
C oss
C rss
65
35
pF
pF
V DS = 10V, V GS =0V
f=1MHz
Capacitance
Switching (?)(?)
Turn-On-Delay Time
t d(on)
2.65
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
4.2
9.9
5.1
2.8
0.61
0.63
ns
ns
ns
nC
nC
nC
V DD = 10V, V GS = 4.5V
I D = 1A
R G ≈ 6.0 Ω
V DS = 10V, V GS = 4.5V
I D = 2.5A
Source-drain diode
Diode Forward Voltage (*)
Reverse recovery time (?)
V SD
t rr
0.73
6.5
1.2
V
ns
I S = 1.25A, V GS =0V
T j =25 o C, I F =1.65A
Reverse recovery charge (?) Q rr
1.4
nC
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
(?) For design aid only, not subject to production testing.
(?) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
? Zetex Semiconductors plc 2008
4
www.zetex.com
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